MMA042PP4/TR

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MMA042PP4/TR Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MMA042PP4/TR
Richardson RFPD #: MMA042PP4/TR
Description: RF & MW LNA
Min/Mult: 250/1
Datasheet MMA042PP4/TR Data Sheet
EDA/CAD Models

MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2.5 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042PP4 amplifier features RF I/Os that are internally matched to 50 Ohm.

Applications

  • Test and measurement instrumentation
  • Electronic warfare (EW), electronic countermeasures (ECM), and electronic counter-countermeasures (ECCM)
  • Military and space
  • Telecom infrastructure
  • Wideband microwave radios
  • Microwave and millimeter-wave communication systems

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 2000
Maximum Frequency (MHz) 26000
Gain (dB) 18
Gain Flatness (dB) 0.75
Noise Figure (dB) 3.5
P1dB (dBm) 15
Output IP3 (dBm) 26
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 6
Current (mA) 120
Package Type QFN

Datasheets

  MMA042PP4

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