MMA044PP3


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MMA044PP3
Richardson RFPD #: MMA044PP3
Description: RF & MW LNA
Min/Mult: 1
Datasheet MMA044PP3 Data Sheet
EDA/CAD Models

The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a plastic leadless 3 mm × 3 mm surface-mount package that operates between 6 GHz and 18 GHz. The MMA044PP3 amplifier provides 17 dB of gain, 2.0 dB noise figure, 14 dBm P1dB, and 28 dBm output IP3. The amplifier draws only 100 mA of current from a 4 V supply. The P1dB power of 14 dBm enables the LNA to function as an LO driver. The RF input and output ports of the amplifier are DC blocked and internally matched to 50 Ohm. This product is also available in die format as the MMA044AA.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 6000
Maximum Frequency (MHz) 18000
Gain (dB) 17
Gain Flatness (dB) 0.5
Noise Figure (dB) 2
P1dB (dBm) 14
Output IP3 (dBm) 28
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 4
Current (mA) 70
Package Type QFN

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1:  $17.7700


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