MMA051PP45


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MMA051PP45
Richardson RFPD #: MMA051PP45
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet MMA051PP45 Data Sheet
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MMA051PP45 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier that operates between DC and 22 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a flat gain of 14 dB, 3.5 dB noise figure, and 30 dBm of output power at 3 dB gain compression at 10 GHZ with a nominal bias condition of 10 V 350 mA. Output IP3 is typically 35 dBm. The MMA051PP45 amplifier features RF I/Os that are internally matched to 50 Ohm, which is ideal for any surface mount technology (SMT) assembly equipment.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 22000
Gain (dB) 14
Gain Flatness (dB) 0.5
Efficiency (%)
Supply Voltage (V) 10
P1dB (dBm) 30
Psat (W)
PAvg (W) 1
Package Type QFN

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