MMRF1008HR5

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MMRF1008HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1008HR5
Richardson RFPD #: MMRF1008HR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MMRF1008HR5 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 275
Gain (dB) 20.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 65.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.08
Package Name NI-780H-2L
Package Type Ceramic Flanged

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Change Notice

  NXP_PCN_202504007I

Datasheets

  MMRF1008H

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