MMRF1020-04GNR3


Manufacturer: NXP Semiconductors
Mfg #: MMRF1020-04GNR3
Richardson RFPD #: MMRF1020-04GNR3
Description: RF Power Transistor
Min/Mult: 250/250
Datasheet MMRF1020-04GNR3 Data Sheet
EDA/CAD Models

N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable for wideband power amplifier applications from 600 to 1000 MHz and saturated power levels up to 500 watts.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 720
Maximum Frequency (MHz) 960
Pout (W) 100
Gain (dB) 19.5
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 49.5
P1dB (W) 200
Psat (W) 500
Thermal Resistance (°C/W) 0.45
Package Name OM-780G-4L
Package Type Plastic Gull Wing

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Unit Price: Pricing in (USD)
250:  $333.6500

Must order in multiple of 250

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Unit Price: Pricing in (USD)
250:  $341.9400