MMRF1050HR6

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MMRF1050HR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1050HR6
Richardson RFPD #: MMRF1050HR6
Description: RF Power Transistor
Min/Mult: 150/1
Datasheet MMRF1050HR6 Data Sheet
EDA/CAD Models

The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 850
Maximum Frequency (MHz) 950
Pout (W) 1050
Gain (dB) 21.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 20
Efficiency (%) 63.7
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.034
Package Name NI-1230H-4S
Package Type Ceramic Flanged

Change Notice

  NXP_PCN_202504007I

Datasheets

  MMRF1050H

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