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Product image for reference only. For precise specifications, refer to datasheet.
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military and radio communications and radar. This device is fabricated using Freescale’s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
Freescale Thermal Measurement Methodology of RF Power Amplifiers
Freescale Using Data Sheet Impedances for RF LDMOS Devices
NXP_PCN_202504007I
MMRF1305H
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