MMRF1305HSR5

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MMRF1305HSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1305HSR5
Richardson RFPD #: MMRF1305HSR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MMRF1305HSR5 Data Sheet
EDA/CAD Models

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military and radio communications and radar. This device is fabricated using Freescale’s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 2000
Pout (W) 100
Gain (dB) 27.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W) 100
Thermal Resistance (°C/W) 0.38
Package Name NI-780S-4L
Package Type Ceramic Flangeless

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Change Notice

  NXP_PCN_202504007I

  NXP_PCN_202512006DN

Datasheets

  MMRF1305H

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