MMRF1306HR5

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MMRF1306HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1306HR5
Richardson RFPD #: MMRF1306HR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MMRF1306HR5 Data Sheet
EDA/CAD Models

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 22.9
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.6
P1dB (W)
Psat (W) 1250
Thermal Resistance (°C/W) 0.15
Package Name NI-1230H-4S
Package Type Ceramic Flanged

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Change Notice

  NXP_PCN_202504007I

Datasheets

  MMRF1306H

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