MMRF1310HR5

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MMRF1310HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1310HR5
Richardson RFPD #: MMRF1310HR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MMRF1310HR5 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 300
Gain (dB) 26.5
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.05
Package Name NI-780H-4L
Package Type Ceramic Flanged

Change Notice

  NXP_PCN_202504007I

Datasheets

  MMRF1310H

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