MMRF1312HR5

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MMRF1312HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF1312HR5
Richardson RFPD #: MMRF1312HR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MMRF1312HR5 Data Sheet
EDA/CAD Models

MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses and is ideal for use in high power military and commercial L-Band radar applications such as IFF and DME/TACAN.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 900
Maximum Frequency (MHz) 1215
Pout (W) 1000
Gain (dB) 19.6
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 59.7
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.017
Package Name NI-1230H-4S
Package Type Ceramic Flanged

Change Notice

  NXP_PCN_202504007I

Datasheets

  MMRF1312H

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