MMRF5014HR5


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMRF5014HR5
Richardson RFPD #: MMRF5014HR5
Description: RF Power Transistor
Min/Mult: 50/50
Datasheet MMRF5014HR5 Data Sheet
EDA/CAD Models

This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications. This part is characterized and performance is guaranteed for applications operating in the 1–2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1
Maximum Frequency (MHz) 2700
Pout (W) 125
Gain (dB) 18
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 66.8
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.86
Package Name NI-360H-2SB
Package Type Ceramic Flanged

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Unit Price: Pricing in (USD)
50:  $649.3100

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Stock: 45 Units

Unit Price: Pricing in (USD)
50:  $665.4200