MMZ09312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier.  The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications.  it is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee® at operating voltages from 3 to 5 Volts.  The amplifier is housed in a cost-effective, surface mount QFN plastic package.