MMZ09332BT1


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MMZ09332BT1
Richardson RFPD #: MMZ09332BT1
Description: RF & MW Power Amplifier
Min/Mult: 1,000/1
Datasheet MMZ09332BT1 Data Sheet
EDA/CAD Models

The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.


Key Attributes Value Search Similar
Technology InGaP
Minimum Frequency (MHz) 130
Maximum Frequency (MHz) 1000
Gain (dB) 30.5
Gain Flatness (dB)
Efficiency (%) 40
Supply Voltage (V) 5
P1dB (dBm) 32.8
Psat (W)
PAvg (W)
Package Type QFN

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