MMZ09332BT1
Stock Availability: 0
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | MMZ09332BT1 |
| Richardson RFPD #: | MMZ09332BT1 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
MMZ09332BT1 |
| EDA/CAD Models |
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The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
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