MRF24G300HSR5

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MRF24G300HSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF24G300HSR5
Richardson RFPD #: MRF24G300HSR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MRF24G300HSR5 Data Sheet
EDA/CAD Models

This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2400
Maximum Frequency (MHz) 2500
Pout (W) 332
Gain (dB) 15.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 73
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.52
Package Name NI-780S-4L
Package Type Ceramic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF24G300HS Datasheet

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