MRF300BN

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MRF300BN NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF300BN
Richardson RFPD #: MRF300BN
Description: RF Power Transistor
Min/Mult: 240/240
Datasheet MRF300BN Data Sheet
EDA/CAD Models

The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and gate pins so they can be used together in Push-Pull configuration.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 250
Pout (W) 300
Gain (dB) 28.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 79
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.55
Package Name TO-247
Package Type Plastic Through-Hole

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF300AN Datasheet

Stock

 Request Quote for Lead Time
Mfg. Stock: 10,000 Units
Unit Price: Pricing in (USD)
240:  $58.7200

Must order in multiple of 240

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