MRF6V10010NR4

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MRF6V10010NR4 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6V10010NR4
Richardson RFPD #: MRF6V10010NR4
Description: RF Power Transistor
Min/Mult: 100/1
Datasheet MRF6V10010NR4 Data Sheet
EDA/CAD Models

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1400
Pout (W) 10
Gain (dB) 25
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 20
Efficiency (%) 69
P1dB (W)
Psat (W) 10
Thermal Resistance (°C/W) 1.6
Package Name PLD-1.5
Package Type Plastic SMT

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF6V10010N

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