MRF6V10010NR4
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | MRF6V10010NR4 |
| Richardson RFPD #: | MRF6V10010NR4 |
| Description: | RF Power Transistor |
| Min/Mult: | 100/100 |
| Datasheet |
MRF6V10010NR4 
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| EDA/CAD Models |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.