MRF6V12500GSR5


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6V12500GSR5
Richardson RFPD #: MRF6V12500GSR5
Description: RF Power Transistor
Min/Mult: 50/50
Datasheet MRF6V12500GSR5 Data Sheet
EDA/CAD Models

This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. This device is suitable for use in pulse applications, including Mode S ELM.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 500
Gain (dB) 19.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 62
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.044
Package Name NI-780GS-2L
Package Type Ceramic Gull Wing

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