MRF6V12500HR5

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MRF6V12500HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6V12500HR5
Richardson RFPD #: MRF6V12500HR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRF6V12500HR5 Data Sheet
EDA/CAD Models

RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 500
Gain (dB) 19.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 62
P1dB (W)
Psat (W) 500
Thermal Resistance (°C/W) 0.044
Package Name NI-780
Package Type Ceramic Flanged

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF6V12500H

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Unit Price:
1:  $2,681.1900
10:  $2,610.6300
25:  $2,543.7000
50:  $2,477.0100
100:  Get Quote


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