MRF6V12500HSR5

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MRF6V12500HSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6V12500HSR5
Richardson RFPD #: MRF6V12500HSR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MRF6V12500HSR5 Data Sheet
EDA/CAD Models

RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 500
Gain (dB) 19.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 62
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.044
Package Name NI-780S-2L
Package Type Ceramic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF6V12500H

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