MRF6V14300HR5

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MRF6V14300HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRF6V14300HR5
Richardson RFPD #: MRF6V14300HR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MRF6V14300HR5 Data Sheet
EDA/CAD Models

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 330
Gain (dB) 18
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 300
Duty Cycle 12
Efficiency (%) 60.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.13
Package Name NI-780
Package Type Ceramic Flanged

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF6V14300H

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