MRF6V14300HSR5
| Manufacturer: | NXP Semiconductors |
|---|---|
| Mfg #: | MRF6V14300HSR5 |
| Richardson RFPD #: | MRF6V14300HSR5 |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
MRF6V14300HSR5 
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| EDA/CAD Models |
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.