MRF8VP13350GNR3

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MRF8VP13350GNR3 NXP Semiconductors
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Manufacturer: NXP Semiconductors
Mfg #: MRF8VP13350GNR3
Richardson RFPD #: MRF8VP13350GNR3
Description: RF Power Transistor
Min/Mult: 250/1
Datasheet MRF8VP13350GNR3 Data Sheet
EDA/CAD Models

This 350 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of 350 W CW or pulse power in narrowband operation.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 700
Maximum Frequency (MHz) 1300
Pout (W) 355
Gain (dB) 20.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 67.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.04
Package Name OM-780G-4L
Package Type Plastic Gull Wing

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRF8VP13350N

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