MRFE6S9060NR1

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MRFE6S9060NR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6S9060NR1
Richardson RFPD #: MRFE6S9060NR1
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6S9060NR1 Data Sheet
EDA/CAD Models

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 880
Maximum Frequency (MHz) 960
Pout (W) 14
Gain (dB) 21.1
Supply Voltage (V) 28
50 Ohm Matching
Test signal CDMA
Pulse Width
Duty Cycle
Efficiency (%) 33
P1dB (W) 67
Psat (W)
Thermal Resistance (°C/W) 0.77
Package Name TO-270
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6S9060N

White Papers

  Freescale 50VRFLDMOSWP White Paper

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