MRFE6VP5300NR1

Stock Availability: 0

MRFE6VP5300NR1 NXP Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP5300NR1
Richardson RFPD #: MRFE6VP5300NR1
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VP5300NR1 Data Sheet
EDA/CAD Models

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. The unmatched input and output design allows wide frequency range utilization, between 1.8 and 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 300
Gain (dB) 25
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.22
Package Name TO-270WB-4
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP5300N

Stock

 Request Quote for Lead Time

Quote Required


Please notify me when stock becomes available!