MRFE6VP61K25GSR5

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MRFE6VP61K25GSR NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP61K25GSR5
Richardson RFPD #: MRFE6VP61K25GSR
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MRFE6VP61K25GSR Data Sheet
EDA/CAD Models

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 23
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.03
Package Name NI-1230GS-4L
Package Type Ceramic Gull Wing

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP61K25H

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Unit Price:
50:  $770.9300
100:  Get Quote


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