MRFE6VP61K25HSR5

Stock Availability: 20

MRFE6VP61K25HS5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP61K25HSR5
Richardson RFPD #: MRFE6VP61K25HS5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VP61K25HS5 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and output design allows wide frequency range utilization, between 1.8 and 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 22.9
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.6
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.15
Package Name NI-1230
Package Type Ceramic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP61K25H

Stock

 Ready for Immediate Shipment
Stock: 20 Units

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 Pricing in (USD)
Unit Price:
1:  $834.4700
10:  $812.5200
25:  $791.6800
50:  $770.9300
100:  Get Quote