MRFE6VP6300HR5

Stock Availability: 290

MRFE6VP6300HR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP6300HR5
Richardson RFPD #: MRFE6VP6300HR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VP6300HR5 Data Sheet
EDA/CAD Models

The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation, high gain, high efficiency, very low

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 300
Gain (dB) 25
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 80
P1dB (W)
Psat (W) 300
Thermal Resistance (°C/W) 0.05
Package Name NI-780
Package Type Ceramic Flanged

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Brochure

  Freescale Industrial, Scientific & Medical Solutions Brochure

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP6300H

White Papers

  Freescale 50VRFLDMOSWP White Paper

Stock

 Ready for Immediate Shipment
Stock: 290 Units

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 Pricing in (USD)
Unit Price:
1:  $640.0900
10:  $623.2500
25:  $607.2700
50:  $591.3500
100:  Get Quote