MRFE6VP6300HSR5

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MRFE6VP6300HSR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP6300HSR5
Richardson RFPD #: MRFE6VP6300HSR5
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet MRFE6VP6300HSR5 Data Sheet
EDA/CAD Models

N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 300
Gain (dB) 25
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 80
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.05
Package Name NI-780S
Package Type Ceramic Flangeless

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Brochure

  Freescale Industrial, Scientific & Medical Solutions Brochure

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP6300H

White Papers

  Freescale 50VRFLDMOSWP White Paper

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50:  $454.6000
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