MRFE6VP6600GNR3

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MRFE6VP6600GNR3 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP6600GNR3
Richardson RFPD #: MRFE6VP6600GNR3
Description: RF Power Transistor
Min/Mult: 250/1
Datasheet MRFE6VP6600GNR3 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 600
Gain (dB) 24.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 73.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.033
Package Name OM-780G-4L
Package Type Plastic Gull Wing

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP6600N

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 Pricing in (USD)
Unit Price:
250:  $367.0600
500:  Get Quote


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