MRFE6VP6600GNR3


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP6600GNR3
Richardson RFPD #: MRFE6VP6600GNR3
Description: RF Power Transistor
Min/Mult: 250/250
Datasheet MRFE6VP6600GNR3 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 600
Gain (dB) 24.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 73.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.033
Package Name OM-780G-4L
Package Type Plastic Gull Wing

Full Reel

Request Quote for Lead Time


Unit Price: Pricing in (USD)
250:  $128.9000

Must order in multiple of 250

Cut Tape

Request Quote for Lead Time


Unit Price: Pricing in (USD)
250:  $132.1000