MRFE6VP6600NR3

Stock Availability: 170

MRFE6VP6600NR3 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP6600NR3
Richardson RFPD #: MRFE6VP6600NR3
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VP6600NR3 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 600
Gain (dB) 24.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 73.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.033
Package Name OM-780-4L
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP6600N

Stock

 Ready for Immediate Shipment
Stock: 170 Units

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 Pricing in (USD)
Unit Price:
1:  $447.9900
10:  $436.2000
25:  $425.0200
50:  $413.8800
100:  Get Quote