MRFE6VP6600NR3


Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP6600NR3
Richardson RFPD #: MRFE6VP6600NR3
Description: RF Power Transistor
Min/Mult: 250/250
Datasheet MRFE6VP6600NR3 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 600
Gain (dB) 24.7
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 73.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.033
Package Name OM-780-4L
Package Type Plastic Flangeless

Full Reel

Ready for Immediate Shipment

Stock: 126 Units

Unit Price: Pricing in (USD)
250:  $118.8900

Must order in multiple of 250

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Unit Price: Pricing in (USD)
250:  $133.8800