MRFE6VS25NR1

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MRFE6VS25NR1 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VS25NR1
Richardson RFPD #: MRFE6VS25NR1
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VS25NR1 Data Sheet
EDA/CAD Models

RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness platform and is suitable for use in applications where High VSWRs are encountered.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 2000
Pout (W) 25
Gain (dB) 25.4
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.5
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 1.2
Package Name TO-270-2
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VS25N

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