MRFX1K80HR5


Stock Availability: 121

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFX1K80HR5
Richardson RFPD #: MRFX1K80HR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFX1K80HR5 Data Sheet
EDA/CAD Models

The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease of matching to 50 Ohms, lower overall system losses, and further improvements in ruggedness. This device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8-400 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 400
Pout (W) 1800
Gain (dB) 25.1
Supply Voltage (V) 65
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 75.1
P1dB (W)
Psat (W) 1800
Thermal Resistance (°C/W) 0.09
Package Name NI-1230H-4S
Package Type Ceramic Flanged

Change Notice
Datasheets

Stock

Ready for Immediate Shipment

Stock: 121 Units

Order

Pricing in (USD)

Unit Price:
1:  $1,037.8600
10:  $1,010.5400
25:  $984.6400
50:  $958.8200
100:  Get Quote