MRFX1K80NR5

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MRFX1K80NR5 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFX1K80NR5
Richardson RFPD #: MRFX1K80NR5
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFX1K80NR5 Data Sheet
EDA/CAD Models

The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 400
Pout (W) 1800
Gain (dB) 24.4
Supply Voltage (V) 65
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 75.7
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.06
Package Name OM-1230-4L
Package Type Plastic Flangeless

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFX1K80N Datasheet

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 Pricing in (USD)
Unit Price:
1:  $863.8200
10:  $841.0800
25:  $819.5200
50:  $798.0400
100:  Get Quote


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