MSC010SDA120B


Stock Availability: 288

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC010SDA120B
Richardson RFPD #: MSC010SDA120B
Description: Silicon Carbide Diode
Min/Mult: 1
Datasheet MSC010SDA120B Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. The MSC010SDA120B is a 1200 V, 10 A SiC SBD in a two-lead TO-247 package.

Features

  • Low forward voltage
  • Low leakage current
  • No reverse recovery current/no forward recovery
  • Avalanche energy rated
  • RoHS compliant
Benefits
  • Higher reliability systems
  • Minimizes heat sink requirements
  • Higher efficiency
Applications
  • H/EV powertrain and EV charger
  • Power supply and distribution
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Aviation

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 25
Configuration Single
Package Type TO-247-2L

Stock

Ready for Immediate Shipment

Stock: 288 Units

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Pricing in (USD)

Unit Price:
1:  $3.9700
50:  $3.8600
100:  $3.8200
250:  Get Quote