MSC080SMA120B4

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA120B4 device is a 1200 V, 80 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, T_J(max) = +175C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS Compliant

Benefits

• High efficiency to enable lighter/compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need of external freewheeling diode
• Lower system cost of ownership

Applications

• PV inverter, converter and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution