MSC090SDA330B2

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MSC090SDA330B2 Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC090SDA330B2
Richardson RFPD #: MSC090SDA330B2
Description: Silicon Carbide Diode
Min/Mult: 2/1
Datasheet MSC090SDA330B2 Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SDA330B2 device is a 3300 V, 90 A SiC SBD in a two-lead T-MAX package.

Features

  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • RoHS compliant

Benefits

  • High switching frequency
  • Low switching losses
  • Low noise (EMI) switching
  • Higher reliability systems
  • Increased system power density

Applications

  • Power factor correction (PFC)
  • Anti-parallel diode: Switch-mode power supply, Inverters/converters, Motor controllers
  • Freewheeling diode: Switch-mode power supply, Inverters/converters
  • Snubber/clamp diode

Key Attributes Value Search Similar
Voltage (V) 3300
Current (A) 184
Configuration Single
Package Type T-MAX

Change Notice

  Microchip_PCN_SYST-17MIVZ103

  Microchip_PCN_BLAS-10EBQB316

Datasheets

  MSC090SDA330B2

Stock

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 Pricing in (USD)
Unit Price:
2:  $315.0000
50:  $306.8200
100:  $302.8900
250:  Get Quote


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