MSC2X101SDA070J


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC2X101SDA070J
Richardson RFPD #: MSC2X101SDA070J
Description: Silicon Carbide Diode
Min/Mult: 1
Datasheet MSC2X101SDA070J Data Sheet
EDA/CAD Models

The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X101SDA070J is a dual 700 V, 100 A SiC SBD device in a SOT-227 package.

Features
  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
  • Isolated voltage to 2500V
Benefits
  • High switching frequency
  • Low switching losses
  • Low noise (EMI) switching
  • Higher reliability systems
  • Increased system power density
  • Direct mounting to the heat sink (isolated package)
Applications
  • Power factor correction (PFC)
  • Anti-parallel diode: Switch-mode power supply, Inverters/converters, Motor controllers
  • Freewheeling diode: Switch-mode power supply, Inverters/converters
  • Snubber/clamp diode

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 100
Configuration Dual parallel
Package Type SOT-227

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Unit Price:
1:  $57.9900
25:  $56.4900
100:  Get Quote


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