MSC2X50SDA070J

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MSC2X50SDA070J Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC2X50SDA070J
Richardson RFPD #: MSC2X50SDA070J
Description: Silicon Carbide Diode
Min/Mult: 20/1
Datasheet MSC2X50SDA070J Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X50SDA070J is a dual 700 V, 50 A SiC SBD device in a SOT-227 package.

Features
  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
  • Isolated voltage to 2500 V
Benefits
  • High switching frequency
  • Low switching losses
  • Low noise (EMI) switching
  • Higher reliability systems
  • Increased system power density
  • Direct mounting to the heat sink (isolated package)
Applications
  • Power factor correction (PFC)
  • Switch-mode power supply
  • Inverters/converters
  • Motor controllers
  • Snubber/clamp diode

Key Attributes Value Search Similar
Voltage (V) 700
Current (A) 50
Configuration Dual anti-parallel
Package Type SOT-227

Change Notice

  Microchip_PCN_BLAS-16DMDR130

  Microchip_PCN_MAAN-28XKXD729

Datasheets

  MSC2X50SDA070J

Stock

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 Pricing in (USD)
Unit Price:
20:  $39.2700
50:  $38.2500
100:  $37.7700
250:  Get Quote


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