MSC2X50SDA120J
Stock Availability: 12
| Manufacturer: | Microchip |
|---|---|
| Mfg #: | MSC2X50SDA120J |
| Richardson RFPD #: | MSC2X50SDA120J |
| Description: | Silicon Carbide Diode |
| Min/Mult: | 10/10 |
| Datasheet |
MSC2X50SDA120J 
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| EDA/CAD Models |
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The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X50SDA170J is a dual 1700 V, 50 A SiC SBD device in a SOT-227 package.
Features- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS compliant
- Isolated voltage to 2500 V
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- RoHS compliant
- Power factor correction (PFC)
- Switch-mode power supply
- Inverters/converters
- Motor controllers
- Snubber/clamp diode
| Other Attributes | Value |
|---|---|
| Output Voltage (V) | 12 |