MSC2X51SDA120J

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MSC2X51SDA120J Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSC2X51SDA120J
Richardson RFPD #: MSC2X51SDA120J
Description: Silicon Carbide Diode
Min/Mult: 10/1
Datasheet MSC2X51SDA120J Data Sheet
EDA/CAD Models

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51SDA170J is a dual 1700 V, 50 A SiC SBD device in a SOT-227 package.

Features
  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
  • Isolated voltage to 2500 V
Benefits
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant
Applications
  • Power factor correction (PFC)
  • Switch-mode power supply
  • Inverters/converters
  • Snubber/clamp diode

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 50
Configuration Dual parallel
Package Type SOT-227

Change Notice

  Microchip_PCN_BLAS-16DMDR130

  Microchip_PCN_MAAN-28XKXD729

Datasheets

  MSC2X50SDA120J

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 Pricing in (USD)
Unit Price:
10:  $49.7900
25:  $48.5000
100:  Get Quote


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