MSCGLQ25X120CRTBL3NG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCGLQ25X120CRTBL3NG
Richardson RFPD #: MSCGLQ25X120CRT
Description: Power IGBT Transistor
Min/Mult: 3/1
Datasheet MSCGLQ25X120CRT Data Sheet
EDA/CAD Models

The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module.

Features

  • High-Speed IGBT 4
    • Low voltage drop
    • Low leakage current
    • Low switching losses
  • SiC Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Ultra low weight and profile
  • Kelvin source for easy drive
  • Si3N4 substrate with thick copper for improved thermal performance
  • Internal thermistor for temperature monitoring
  • Extended temperature range

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very integrated power conversion system
  • Low profile
  • RoHS Compliant

Applications

  • High reliability drive
  • Medium and heavy drones
  • Aircraft actuation systems

Key Attributes Value Search Similar
Configuration Three-Phase Bridge
Voltage (V) 1200
Current (A) 25
Package Type

Datasheets

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Unit Price:
3:  $225.6300
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