MSCGTQ100HD65C1AG

Stock Availability: 8

MSCGTQ100HD65C1 Microchip
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCGTQ100HD65C1AG
Richardson RFPD #: MSCGTQ100HD65C1
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 8/1
Datasheet MSCGTQ100HD65C1 Data Sheet
EDA/CAD Models

Features

  • High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • AlN substrate for improved thermal performance

Benefits

  • Stable temperature behavior
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low Profile
  • RoHS compliant

Applications

  • Power factor correction

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 80
Configuration Vienna PFC
Package Type SP1

Change Notice

  Microchip Change Notice ASER-08CMEO630

Datasheets

  MSCGTQ100HD65C1

Stock

 Ready for Immediate Shipment
Stock: 8 Units

Order

 Pricing in (USD)
Unit Price:
8:  $118.3300
25:  $115.2800
100:  Get Quote