MSCGTQ100HD65C1AG


Stock Availability: 8

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCGTQ100HD65C1AG
Richardson RFPD #: MSCGTQ100HD65C1AG
Description: Silicon Carbide/Silicon Hybrid Modules
Min/Mult: 1
Datasheet MSCGTQ100HD65C1AG Data Sheet
EDA/CAD Models

Features

  • High speed IGBT 5: Low voltage drop, Low tail current, Switching frequency up to 100 kHz, Very rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • AlN substrate for improved thermal performance

Benefits

  • Stable temperature behavior
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low Profile
  • RoHS compliant

Applications

  • Power factor correction

Key Attributes Value Search Similar
Voltage (V) 650
Current (A) 80
Configuration Vienna PFC
Package Type SP1

Other Attributes Value
Rds(on) (mΩ)

Datasheets

Stock

Ready for Immediate Shipment

Stock: 8 Units

Unit Price: Pricing in (USD)
1:  $117.6400

Must order in multiple of 1