Features
- SiC Power MOSFET
- Low RDS(on)
- High temperature performance
- Silicon carbide (SiC) Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
- Very low stray inductance
- Internal thermistor for temperature monitoring
- M4 and M5 power connectors
- M2.5 signals connectors
- AlN substrate for improved thermal performance
- High efficiency converter
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Low profile
- RoHS compliant
- Welding converters
- Switched mode power supplies
- Uninterruptible Power Supplies
- EV motor and traction drive
