Features
- SiC Power MOSFET
- High-speed switching
- Low RDS(on)
- Ultra low loss
- Silicon carbide (SiC) Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
- Kelvin source for easy drive
- Low stray inductance
- Internal thermistor for temperature monitoring
- Aluminum nitride (AlN) substrate for improved thermal performance
- High efficiency converter
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals both for power and signal for easy PCB mounting
- Low profile
- RoHS compliant
- Inductor heating and welding
- Solar inverter
- EV motor and traction drive
| Other Attributes | Value |
|---|---|
| Rds(on) (mΩ) | 6.25 |
