MSCSM120AM50CT1AG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM120AM50CT1AG
Richardson RFPD #: MSCSM120AM50CT1
Description: Silicon Carbide MOSFET Modules
Min/Mult: 9/1
Datasheet MSCSM120AM50CT1 Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
  • High-power and high-efficiency converters and inverters
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 44
Configuration Phase Leg
Package Type SP1F

Other Attributes Value
Rds(on) (mΩ) 40

Datasheets

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Unit Price:
9:  $80.8500
25:  $78.7500
100:  Get Quote


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