MSCSM120DAM11CT3AG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM120DAM11CT3AG
Richardson RFPD #: MSCSM120DAM11CT
Description: Silicon Carbide MOSFET Modules
Min/Mult: 4/1
Datasheet MSCSM120DAM11CT Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET
    • High Speed Switching
    • Low RDS(on)
    • Ultra low loss
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Low stray inductance
  • Kelvin source for easy drive
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
  • High efficiency converters
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • Inductor heating and welding
  • Solar inverter
  • Uninterruptible Power Supplies

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 202
Configuration Boost Chopper
Package Type SP3F

Other Attributes Value
Rds(on) (mΩ) 11

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Unit Price:
4:  $195.9600
25:  $190.9000
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