MSCSM120DUM16T3AG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM120DUM16T3AG
Richardson RFPD #: MSCSM120DUM16T3
Description: Silicon Carbide MOSFET Modules
Min/Mult: 4/1
Datasheet MSCSM120DUM16T3 Data Sheet
EDA/CAD Models

The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module.

Features
  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • Kelvin source for easy drive
  • Low stray inductance
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
  • Internal thermistor for temperature monitoring
Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
Applications
  • AC switches

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 138
Configuration Dual common source
Package Type SP3F

Other Attributes Value
Rds(on) (mΩ) 12.5

Datasheets

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Unit Price:
4:  $173.3200
25:  $168.8500
100:  Get Quote


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