MSCSM120DUM31CTBL1NG


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: MSCSM120DUM31CTBL1NG
Richardson RFPD #: MSCSM120DUM31CT
Description: Silicon Carbide MOSFET Modules
Min/Mult: 6/1
Datasheet MSCSM120DUM31CT Data Sheet
EDA/CAD Models

Features
  • SiC Power MOSFET
    • Low RDS(on)
    • High speed switching
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature independent switching behavior
    • Positive temperature coefficient on VF
  • Ultra-low weight and profile
  • Kelvin source for easy drive
  • Si3N4 substrate with thick copper for improved thermal performance
  • Internal thermistor for temperature monitoring
  • Extended temperature range
Benefits
  • High efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-heatsink thermal resistance
  • Low profile
  • RoHS compliant
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very integrated power conversion system
Applications
  • High reliability power systems
  • AC switches

Key Attributes Value Search Similar
Voltage (V) 1200
Current (A) 79
Configuration Dual Common Source
Package Type BL1

Datasheets

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Unit Price:
6:  $128.3300
25:  $125.0200
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